(f) T 3G+T 3G- configurations of VDF molecules, adapted from Ref.įigure Fig. (e) TG+TG- configurations of VDF molecules. (d) TT configurations of VDF molecules, adapted from Ref. (c) 60° model for polarization reversal adapted from Ref. (b) 180° model for polarization reversal, adapted from Ref. 1. (Color online) (a) Hysteresis loop of PVDF, adapted from Ref. (m) Such a polarization fluctuation can be suppressed by depositing the ultrathin PMMA film between the semiconductor and ferroelectric layers, and the charge carrier transport is improved, adapted from Ref.įigure Fig. (l) Illustrative presentation of the polarization fluctuation within the semiconductor/insulator interface, influencing the charge carrier transport, adapted from Ref. (k) X-ray diffraction (XRD) signal of C 8-BTBT films on P(VDF–TrFE) and P(VDF–TrFE)/PMMA, adapted from Ref. (j) AFM images of surfaces of C 8-BTBT film on P(VDF–TrFE)/PMMA, adapted from Ref. (i) AFM images of surfaces of C 8-BTBT film on P(VDF–TrFE), adapted from Ref. (h) AFM images of surfaces of P(VDF–TrFE)/PMMA, adapted from Ref. (g) AFM images of surfaces of P(VDF–TrFE), adapted from Ref. (e) and (f) illustrate the pulse responses of the Fe-OFETs with and without PMMA buffering, adapted from Ref. (d) Dependence of capacitance divided by channel conductance on gate voltage frequency, adapted from Ref. (c) Distributions of the field-effect mobility of devices with and without PMMA buffering, adapted from Ref. (b) Typical transfer curves of different devices with (blue line) and without (red line) PMMA buffering layer, adapted from Ref. The ultrathin PMMA film works as a buffering layer between organic semiconductor layers and ferroelectric insulator of P(VDF–TrFE), buffering the polarization fluctuation from the semiconductor-insulator interface, adapted from Ref. (Color online) Schematic illustration of the Fe-OFET with the bottom-gate top-contact structure.
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